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| (R) THD215HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors. 1 3 2 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 10 20 5 10 57 -65 to 150 150 Uni t V V V A A A A W o o C C 1/6 November 1998 THD215HI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO I CES I EBO V CEO(sus) V CE(sat ) V BE(s at) h F E Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain Test Cond ition s V CE = 700 V V CE = 1500 V V EB = 5 V I C = 100 mA IC = 6 A IC = 6 A I C = 10 mA IC = 6 A IC = 6 A I C = 4.5 A I B1 = 1.5 A IB = 1.2 A IB = 1.2 A VCE = 5 V V CE = 5 V V CE = 5 V 10 6 4 3.3 160 700 1.3 1.3 Min. Typ . Max. 10 10 100 Un it A A A V V V T j = 125 C o 13 ts tf INDUCTIVE LO AD Storage Time Fall Time f = 64 KHz IB2 = -2.4 A 6 V c eflybac k = 1100 sin 10 t V 5 s ns Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/6 THD215HI Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 64 KHz Switching Time Inductive Load at 64 KHz 3/6 THD215HI Reverse Biased SOA 4/6 THD215HI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 5/6 THD215HI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6 |
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